Abstract
A new, deep UV resist, LMR (low molecular weight resist) has been developed. LMR is a quinone–diazide ester of a novolak resin whose molecular weight is about 1000. It has strong absorption in the deep UV region (12 μm−1 at 250 nm). LMR is negative working upon irradiation with deep UV light and forms an overhung structure with a single development step. The sensitivity of LMR is 30 mJ/cm2 and 0.3 μm wide spaces are clearly resolved. By use of LMR, a simple and reliable lift-off process is realized. Submicron wide metal patterns having a thickness twice that of the resist can be formed by this process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
