Abstract
A new sub-1V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic NPN and PNP BJT devices in the CMOS process, is presented. The new proposed sub-1V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25 /spl mu/m CMOS process. The experimental results have verified that, at the minimum supply voltage of 0.9 V, the output reference voltage is 536.7 mV with a temperature coefficient of 19.55 ppm//spl deg/C from 0/spl deg/C to 100/spl deg/C. With 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz.
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