Abstract
A new concept of differential effective mobility is proposed. It characterizes the effective mobility of an increment of drain current resulting from a small increase of inversion charge in MOSFET channel. It allows us to show that the effective mobility can be described by a local electric field approach and not entirely by an effective electric field model.
Highlights
The effective mobility μeff is one of the most important device parameters characterizing the transport in MOS transistors
It allows us to show that the effective mobility can be described by a local electric field approach and not entirely by an effective electric field model
We propose a new concept for the mobility, namely, the differential effective mobility, which characterizes the effective mobility of an increment of drain current resulting from a small increase of inversion charge
Summary
The effective mobility μeff is one of the most important device parameters characterizing the transport in MOS transistors. The effective mobility in a MOSFET is intimately related to the average mobility of the carriers forming the inversion channel. From an experimental point of view, the effective mobility can be obtained by normalizing the drain current Id in linear regime by the inversion charge Qi as μeff. The inversion charge is obtained by integration of the gate-to-channel capacitance Cgc(Vg) in the so-called split C-V technique [1, 2]. We propose a new concept for the mobility, namely, the differential effective mobility, which characterizes the effective mobility of an increment of drain current resulting from a small increase of inversion charge
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