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Abstract
A new compound of the formula Mg3In4V6O24 belonging to the family M3A4V6O24 [where M = metal(II), A = metal(III)] was obtained by the solid-state reaction method. The compound was synthesized by heating in air a mixture of Mg3(VO4)2 and InVO4 or MgV2O6 and In2O3 or In2O3 and V2O5, with a precursor of MgO. The new compound was characterized by XRD, SEM, IR, UV–Vis and DTA–TG methods. Mg3In4V6O24 was shown to crystallize in the triclinic system. Its unit cell parameters were calculated. The new compound is stable in air up to 1000 °C and is a semiconductor (Eg ~ 3.3 eV).
Highlights
Semiconductors have been for a long time fundamental to development of industry and are pivotal elements of many devices
Twelve samples were prepared from V2O5, In2O3 and 3MgCO3ÁMg(OH)2Á3H2O with compositions representing the whole range of the components concentrations of
Taking into account that the new set of X-ray diffraction (XRD) lines was recorded in the diffractogram of the sample whose initial mixture with V2O5 and In2O3 contained 37.50 mol % of MgO (Table 1, sample 10), the new compound was described by the stoichiometric formula Mg3In4V6O24
Summary
Semiconductors have been for a long time fundamental to development of industry and are pivotal elements of many devices. Keywords Mg3In4V6O24 Á Ceramic compound Á Solid-state reaction Á Magnesium vanadate(V) According to the hitherto published scarce data on this system, as a result of the reaction of Mg2V2O7 with InVO4 in solid state, one compound Mg2InV3O11 is formed [15].
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