Abstract
buried Schottky contact model for the complex behavior of Cu in GaP. PIXE studies show that Cu can reach very high concentrations in that material. Channeling indicates that a part of the Cu forms precipitates. Hall measurements on sets of samples were made to examine the electrical trans port coefficients. The mobilities of the samples with the most abundant concentration of Cu were found to be dominated by a term ocT0·5 which was identified as a component induced by metallic spikes with non-overlapping depl etion zones. We come to the conclusion that Cu introduces an acceptor like defect as well as precipitates. For high initial carrier concentrations,
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