Abstract
Abstract This paper discusses new techniques for elucidating removal mechanisms of copper during chemical-mechanical polishing. Two new approaches were used in this research. One is the linkage between electrochemical, passivation, and wear for removal mechanisms. The other is to use an atomic force microscope to analyze polished copper surfaces at a nanometer length scale. Effects of pH, concentration of oxidizer, cathodic current, and amount of abrasive particles on surface materials removal were studied. Our investigation indicates that a balance between passivation and removal is needed to achieve a good localized planarization.
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