Abstract

New approaches for current problems facing cascade solar cells in III-V compounds are addressed. Spinodal decomposition of metastable alloys such as AlGaAsSb resulting in the separation of low band gap phases is proposed as an interconnect between the two cells. A new superlattice structure based on the ternary alloys GaAsP and InGaAs has been used to reduce defects originating from a GaAs substrate or a lattice-mismatched interface. This superlattice structure with E g = 1.25 eV is used to extend photon absorption beyond the band gap GaAs without the introduction of lattice defects.

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