Abstract
SiO x nanowire bunches were fabricated on a SiN x film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiN x film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiO x nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiO x NWs and easily grow the NW bunch.
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