Abstract
A two-step process is designed for removing crystal-originated pits (COPs) in the near-surface region of the Czochralski-grown silicon wafers. Firstly, Ge-ion implantation is used to acquire amorphous layer and thus disrupt COPs in the near-surface region. Following that, the annealing process is performed to boost solid-phase epitaxial growth (SPEG) and remove the implant damage. It is verified by cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering spectroscopy (RBS), Raman spectroscopy and laser scattering technique that a refinement epitaxial layer of fewer COPs and excellent crystalline properties can be acquired by our method. Additionally, it is found that appropriate Ge-implant dose may be around 6×10 14/cm 2 and the corresponding annealing temperature should be above 600 °C. The two-step process may have some advantages, including relaxed conditions for pulling crystals, over previous methods.
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