Abstract
A new approach to the characterization of single-crystalline silicon carbide (SiC) ingots is proposed, which can be used for the rapid diagnostics of material quality under large-scale commercial production conditions. The proposed method can reveal various defects, such as polytype inclusions, small-angle grain boundaries, dislocations, micropipes, and inhomogeneous dopant distribution and can be used to optimize technological regimes for growing bulk SiC single crystals.
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