Abstract
The 3D Ni/NiO/MoO3/chitosan foam was fabricated and the interfacial barrier of p-n junction was proposed as a driving factor for electrochemical detection of Cu2+. The electrochemical response resulted from the decreased barrier height caused by the absorbed Cu2+. The liner range (0–25 μM) and the lower detection limit (5.69 nM) were obtained. The direct electrochemical detection of Cu2+ in real water sample with excellent stability and recovery was achieved. It affords a new approach to achieve the direct electrochemical detection of metal ions with depressed interference by employing the interfacial effects of p-n junction.
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