Abstract
A new method has been proposed for determining the atomic number density of a specific element in multi-layered thin films using grazing X-ray reflection and anomalous dispersion effect with the help of the Fourier filtering technique. The essential equations for analyzing the measured reflection data using the anomalous grazing X-ray reflectometry (AGXR) were given and the capability of this new method was demonstrated by obtaining the atomic number densities of constituents in a multi-layered thin film consisting of GaAs/AlAs/GaAs heterostructure.
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