New and possible future trends in inductively coupled plasmas (ICPs) for semiconductor processing

Abstract

ICPs have become one of the dominant high-density plasma sources for etching. More variations of ICP etch sources are currently being developed and inductive systems for high-density plasma deposition are also being developed. In addition, helicon inductive sources are being developed in single loop and spiral antenna configurations. In the future these two fields may merge to combine the optimum features of both systems. The physics of low-pressure ICP systems will be discussed. Experimental effects of multipole magnetic fields near the rf coil will be described as they relate to low pressure and electronegative gases.