Abstract
A new two-dimensional model for subthreshold current in fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) is developed. The model is based on analytical approximation of two-dimensional Poissons's equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron SOI MOSFETs.
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