New Al Post-Etch Residue Remover with Al Surface Passivation Function

Abstract

A new Al post-etch residue remover with Al surface passivation function was developed. It is capable of removing polymer and inorganic residues with good compatibility to thin Aluminum, TiN, TaN, NiSi, and various silicon oxide films. A monolayer of passivation on the Al surface can be deposited in situ to prevent further oxidation and corrosion of the thin Al film. The passivation layer can be easily removed by a short plasma clean or baking to prepare the pristine Al surface for the successive processes. This solution is recommended for cleaning in FEOL high k/metal gate processes and contacts.