Neutron transmutation doping of III–VI layered semiconductors

Abstract

Results on neutron transmutation doping of III–VI layered semiconductors (GaS, GaSe, InSe) are reported. The evolution of electrical and optical properties before and after thermal annealing shows that neutron induced defects are recombined at temperatures of 400°C for InSe, 470°C for GaSe, and 520°C for GaS. The resistivity of the annealed samples is about five orders of magnitude lower than that of as irradiated materials. Optical absorption tails and peaks in the forbidden band, appearzng in as irradiated samples, disappear after annealing and the shape of the intrinsic absorption edge is recovered.