Abstract
Deep level transient spectroscopy (DLTS) of low free carrier concentration n-GaAs revealed that high energy neutron irradiation introduced five electron traps, En1–En5, in molecular beam epitaxy (MBE) grown GaAs. Only four of these defects, En1, En2, En4 and En5 could be detected in irradiated GaAs grown by organo-metallic vapor phase epitaxy (OMVPE). The En1, En2 and En4 have similar DLTS “signatures” as the E1, E2 and E3 defects created during high energy electron irradiation of GaAs. The DLTS “signatures” of En5 in the MBE and OMVPE samples are different, and this difference is attributed to the presence of a near-surface defect which is more readily detectable in the MBE GaAs.
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