Abstract

Abstract Radiation damage in SiC whiskers has been observed using transmission electron microscopy. Damage is apparent as spots up to 5 nm diameter at neutron doses in excess of 2 × 1020 n.v.t.  0·18 MeV. At the highest dose employed (∼1·2 × 1021 n.v.t.0·18 MeV), agglomeration of defects appears to have taken place. Further evidence for defect condensation was obtained on examination of vacuum-annealed irradiated whiskers, when dislocation loops lying on {111} were observed.

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