Neutron irradiation and polarization effect of 4H–SiC Schottky detector

Abstract

Neutron irradiation experiments were carried out on a 4H–SiC Schottky detector. The effects of neutron and accompanying γ-rays irradiation on the electrical properties, charge collection efficiency (CCE), energy resolution and crystal defects of 4H–SiC detectors were investigated. The total irradiation fluence was 1.24 × 1014 n/cm2, with an equivalent 1 MeV neutron fluence of 1.33 × 1015 n/cm2. Following neutron irradiation, the turn-on voltage increased significantly, and the capacitance of the Schottky junction no longer varied with the reverse bias voltage. The CCE of the detector decreased from 100% to 90.8%, while the energy resolution increased from 0.79% to 1.49%. The irradiated detector required a higher bias voltage for optimal performance. Additionally, we observed two defect levels, Ec-0.5 eV and Ec-0.35 eV, in the 4H–SiC crystals after irradiation. Their generation is also related to gamma ray irradiation. The detector exhibited a polarization effect, where the energy spectrum split into two distinct components during prolonged measurement of monoenergetic α particles. The peak position gradually shifted towards the lower energy side with increasing testing time. These effects can be mitigated by increasing the bias voltage to enhance the electric field strength in the drift region.