Neutron-induced single event effect in Xilinx 16nm MPSoC configuration RAM (CRAM) using white neutron and 2.72~81.8meV neutron in CSNS-BL20

Abstract

ABSTRACT Multi-Processor System on Chip is widely used in 5G wireless, advanced driver assistance system, industrial internet of things and other fields, it suffers the risk from neutron-induced single event effects. In the China Spallation Neutron Source BL20 neutron performance measurement room, the white and 2.72~81.8meV neutrons are obtained by adjusting the phase of the choppers, and the neutron-induced single event effect experiments on configuration memory of the Xilinx 16nm MPSoC were carried out. Single bit upset and single event functional interruption events were detected in various irradiation modes. The results show that 16nm MPSoC is sensitive to low energy neutrons because of 10B. Analysis shows that 2.72~81.8meV neutrons take up about 7.1% of the white neutron, but the contribution to the entire white neutron inducing single event upsets reaches 63%. Further analysis manifests that neutrons in the thermal energy region account for about 9.6% in white neutron irradiation mode, but their contribution to single event upset is about 44%. And for 2.72~81.8meV neutron irradiation mode, neutrons from 2.72 to 10meV and 10 to 81.8meV contributed 46% and 54% of soft errors, respectively. Therefore, for certain radiation fields, it is recommended to focus on the impact of low energy neutrons.