Neutron Induced Energy Deposition in a Silicon Diode

Abstract

Simulation of energy deposition in silicon by nuclear reactions is a crucial point for single event prediction tool development. In order to compare with the simulation of nuclear reactions, a silicon diode is irradiated by a 30 MeV and 63 MeV neutron beam and the energy deposited by each nuclear reaction is measured. Simulation of the ionizing energy deposition in the irradiated diode is performed by the Monte Carlo method using nuclear reaction databases. Neutron beam spectra and surrounding materials are taken into account. Experimental and simulated results are shown to be in good agreement.