Abstract
The radiation response of broad-area GaAs quantum-well laser diodes and arrays that emit up to 2 W from a 100- mu m to 150- mu m region at the front facet was tested. Results at neutron fluence levels up to 10/sup 15/ n/cm/sup 2/ are reported. The lasing threshold currents of these high-power GaAs laser diodes and arrays increased less than 40% after exposure to 10/sup 14/ n/cm/sup 2/. Threshold current rose by 100% to 250%, and a possible increased susceptibility to facet damage was observed at 10/sup 15/ n/cm/sup 2/. The results indicate that the mechanisms for degradation are the same as those observed for the older semiconductor laser technologies. >
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