Abstract
The expected increase of total integrated luminosity by a factor ten at the HL-LHC compared to the design goals for LHC essentially eliminates the safety factor for radiation hardness realized at the current cold amplifiers of the ATLAS Hadronic End-cap Calorimeter (HEC). New more radiation hard technologies have been studied: SiGe bipolar, Si CMOS FET and GaAs FET transistors have been irradiated with neutrons up to an integrated fluence of 2.2 · 1016 n/cm2 and with 200 MeV protons up to an integrated fluence of 2.6 · 1014 p/cm2. Comparisons of transistor parameters such as the gain for both types of irradiations are presented.
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