Abstract
AbstractIn this paper a new time domain based neural network model of a 0.18 μm RF MOSFET will be demonstrated. The model consists of only three intrinsic non‐linear current sources, each being modelled by a neural network derived from large signal time domain voltage/current waveform measurements at the intrinsic device terminals. This approach negates the traditional method of multi‐bias S‐parameter measurement providing a fast and accurate method of modelling the transistor under large signal conditions. Full verification of the model will be provided against an 80 μm/0.18 μm MOSFET operating at 2.4 GHz. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 203–206, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10558
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