Abstract
A novel thin film approach to neural network based high density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 109bits/cm2. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory (PROM) elements. Low energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High speed associative recall approaching 107bits/sec and high storage capacity in such a connection matrix memory system is also described.
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