Abstract
The epitaxy of Cu2O grown on copper crystal spheres by thermal oxidation is well known. Allways one pair of 〈110〉 directions in the metal and the oxide are parallel. The complicate epitaxial situation of the antiparallel orientation on the 〈110〉 great circles is now established by two principles: The atomic relievo of a {hhl} plane consists of {111}, {001} or {110} facets. Adjacent facets of metal and oxide must contain the same number of 〈110〉 rows of metal atoms and the distance between 〈110〉 rows in adjacent facets must not deviate more than 20%. An older rule was concerned with the distance of 〈110〉 rows in the {hhl} planes. This rule is a consequence of the two principles but solely it is not sufficient.
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