Abstract
AbstractSolarWorld has developed a new entrant in the field of crystal growth for silicon photovoltaic substrates. The NeoGrowth technique is a contactless bulk crystal growth method for producing single crystal ingots. NeoGrowth material can be produced at a throughput on par with G5 multicrystalline silicon, but with p‐type as‐grown minority carrier lifetimes exceeding 600 microseconds for a 1.5‐ohm cm resistivity. The silicon has low oxygen, and light‐induced degradation is measured at 0.5% to 0.7% in passivated emitter rear contact–based modules. In the first report of results from this technique, p‐type resistivity can be managed within a range of 1.5 to 2.0 ohm cm over the entire ingot. Dislocation density is shown to be typically in the 104 to 105/cm2 range but can be managed down to even lower levels. After cell processing steps, minority carrier lifetime can exceed 1.5 milliseconds for p‐type material and cell efficiencies on industrial cells range up to 20.9%.
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