Abstract
Nd 2O 3 and NdAlO 3 thin films were deposited onto Si(100) and soda lime glass by atomic layer deposition using Nd(thd) 3, O 3, (CH 3) 3Al and H 2O as precursors at 200–450 °C. Films were analyzed by X-ray diffraction, Fourier transform infrared spectroscopy, atomic force microscopy, X-ray fluorescence spectroscopy and time-of-flight elastic recoil detection analysis. Cubic (100) oriented Nd 2O 3 films with a relative permittivity of 10.5 were obtained at 290–325 °C. The carbon content of the films deposited at low temperatures was high but decreased with increasing temperature and could be further reduced by annealing at 650–700 °C. Nd 2O 3 films with low carbon content were somewhat unstable and became hydrated upon storage in the ambient. NdAlO 3 films deposited at 300 °C were amorphous but crystallized during annealing in nitrogen or oxygen at 850–900 °C.
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