Abstract
Device simulations are essential to explore new device designs, optimize performance, and analyze the underlying physics. Nanoelectronic devices pose a new challenge in this area since conventional drift-diffusion simulators are not applicable, NEMO (NanoElectronic MOdeling) is a new quantum device simulator based on a non-equilibrium Green's function formalism that simulates a wide variety of quantum devices, including RTDs, HEMTs, HBTs, superlattices, and Esaki diodes. Here we announce the general release of NEMO as a national resource freely available to the US scientific community. We present NEMO calculations for InGaAs/AlAs and GaAs/AlAs RTD devices.
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