Abstract
We designed a novel chemically-amplified negative-tone molecular-resist compound of 3M6C-MBSA-BL, which is a γ-hydroxycarboxylated polyphenol (4,4'-methylenebis[2-[di(2-methyl-4-hydroxy-5-cyclohexylphenyl)] methyl]phenol (3M6C-MBSA)) for EB and EUV lithographies to be used in hp 45 and beyond technology nodes. After selection of photo acid generators (PAGs) and optimization of the concentration of PAG in the resist, we could demonstrate 40-nm line and space patterns resolution by EB exposure. Also dry-etching durability and 1-month shelf life at -20<sup>o</sup>C were confirmed. Small line-edge roughness (LER) values of 4.5 nm (inspection length: <i>L</i> = 620 nm) and 6.2 nm (<i>L</i> = 1800 nm) were achieved using the 3M6C-MBSA-BL resist.
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