Abstract
AbstractA first‐generation dendrimer (2), containing phenol groups in the exterior for solubilization in aqueous alkaline solutions, was evaluated as a new negative‐working, alkaline‐developable photoresist material. A negative‐working photoresist based on 2, 4,4′‐methylenebis[2,6‐bis(hydroxymethyl)phenol] as a crosslinker, and diphenyliodonium 9,10‐dimethoxyanthracene‐2‐sulfonate as a photoacid generator was demonstrated. This resist gave a clear negative pattern through postbaking at 90 °C after exposure to UV light, which was followed by development with a 2.38% aqueous tetramethyl ammonium hydroxide solution at room temperature. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 43: 1210–1215, 2005
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Polymer Science Part A: Polymer Chemistry
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
