Abstract
Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiOx/TiN structure have been investigated for the first time. The as-deposited amorphous BaTiOx film has been confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba in the switching material, which is responsible for tunable more than 10 resistance states by varying negative stop voltage owing to slow decay value of RESET slope (217.39 mV/decade). Quantum conductance phenomenon has been observed in staircase RESET cycle of the memory devices. By inspecting the oxidation states of Ba+ and Ba2+ through measuring H2O2 with a low concentration of 1 nM in electrolyte/BaTiOx/SiO2/p-Si structure, the switching mechanism of each HRS level as well as the multi-level phenomenon has been explained by gradual dissolution of oxygen vacancy filament. Along with negative stop voltage modulated multi-level, current compliance dependent multi-level has also been demonstrated and resistance ratio up to 2000 has been achieved even for a thin (<5 nm) switching material. By considering oxidation-reduction of the conducting filaments, the current-voltage switching curve has been simulated as well. Hence, multi-level resistive switching of Cr/BaTiOx/TiN structure implies the promising applications in high dense, multistate non-volatile memories in near future.
Highlights
Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiOx/TiN structure have been investigated for the first time
Detection of pH and H2O2 is performed by using electrolyte/BaTiOx/SiO2/p-Si structure, which is shown in Fig. 2 schematically
The negative voltage modulated multi-level resistive switching and quantum conductance have been reported in simple Cr/BaTiOx/TiN structure
Summary
Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiOx/TiN structure have been investigated for the first time. Quantum conductance occurs due to movement of the oxygen vacancies[19] when the contact point of filament is reduced to atomic scale Nowadays, this phenomenon is at the center of attraction due to its possible application in multi-level and neuromorphic resistive memory[20,21,22]. The negative stop voltage modulated multi-level resistive switching in Cr/BaTiOx/TiN structure is observed due to gradual dissolution of oxygen vacancy filament. The switching mechanism including multi-level operation and quantum conductance in staircase RESET is explained through evidence of H2O2 sensing with concentration of 1 nM to 1000 nM in electrolyte/BaTiOx/SiO2/p-Si structure. This unique presentation of switching mechanism through H2O2 sensing shows a path towards combination of resistive memory and bio-sensor
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