Abstract
We study the tunnel magnetoresistance (TMR) and spin transport in ferromagneticgraphene junctions composed of ferromagnetic graphene (FG) and normal graphene(NG) layers. It is found that the TMR in the FG/NG/FG junction oscillatesfrom positive to negative values with respect to the chemical potential adjustedby the gate voltage in the barrier region when the Fermi level is low enough.Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillatesperiodically from a positive to negative value with increasing the barrier height at anyFermi level. The spin polarization of the current through the FG/FG/FG junctionalso has an oscillating behavior with increasing barrier height, whose oscillatingamplitude can be modulated by the exchange splitting in the ferromagnetic graphene.
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