Abstract
We investigate the negative thermal quenching behavior of the 3.338eV emission in ZnO nanorods. A correlation between the 3.338eV and the 3.368eV (surface exciton) emissions is determined from temperature-dependent photoluminescence. The activation energies of the 3.338eV emission, obtained using an approximated multi-level model, indicate an trap state between the two surface exciton emissions. The present study demonstrates a nondestructive and easy method to understand the surface effects on the optical properties of semiconductor nanostructures.
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