Abstract
We analyze a graphene tunneling transit-time device based on a heterostructure with a lateral p–i–n junction electrically induced in the graphene layer and calculate its ac characteristics. Using the developed device model, it is shown that the ballistic transit of electrons and holes generated due to interband tunneling in the i-section results in the negative ac conductance in the terahertz frequency range. The device can serve as an active element of terahertz oscillators
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
