Abstract
Vacuum condensed Al-CdS-Al structures have been studied under unidirectional voltage pulse excitation. The current-voltage characteristics show negative resistance in the low-voltage region. The results are explained in terms of the build-up process of barrier field at the cathode owing to reapplication of the time increasing voltage, superposed on the decay of space charge in the barrier region accumulated during application of the previous voltage pulse. The voltage corresponding to the minimum in the current-voltage characteristics has been used to evaluate the lifetime of positive space charge trapped in the surface states at the metal semiconductor contact interface. This is in the range of a few milliseconds. The results depend upon the contact characteristics and are affected by the external dc biasing of the cathode barrier.
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