Abstract
The negative resistance volt-ampere characteristic of a solution-grown indium antimonide p+−p−n+ diode is presented. The curve can be understood through the use of crude models. A prebreakdown nonlinearity and the negative resistance are attributed to the growth of a high-conductivity plasma across the sample. A shallow negative resistance in the postbreakdown region is thought to be caused by lateral expansion of this plasma. Finally, a postbreakdown characteristic of the form I ∝ V3 is explained in terms of a double-injection recombination-limited current with a current-dependent effective diode length.
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