Negative-pressure sulfurization of antimony sulfide thin films for generating a record open-circuit voltage of 805 mV in solar cell applications

Abstract

Herein, we developed a new sulfurization method to obtain S-rich Sb2S3, which passivated the internal deep-level defects of the film. Finally, a record open-circuit voltage of 805 mV was achieved, which is the highest value for Sb2S3 solar cells.