Abstract
We report a negative photoconductivity effect in sulfur-hyperdoped silicon film under near-ultraviolet light illumination. A weak incident ultraviolet light can cause a significant increase in the sheet resistance of the film, and the most sensitive sample observed has the maximum increment of 817%. In addition, the amplitude of this negative photoconductivity decreases with the time of thermal annealing treatment. The negative photoconductivity of sulfur-hyperdoped silicon film is related to light-induced defects which act as recombination center in the bandgap.
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