Abstract
We performed magneto-resistance measurements on a semi-metallic InAs–GaSb quantum well. By shining visible light on the sample, a Negative Persistent Photoconductivity effect (NPPC) was observed. Overnight illumination reduced the electron density of the sample from 9.54×10 11 cm −2 to 9.04×10 11 cm −2. A possible explanation for this effect is being sought in interface defect states.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
