Negative magnetoresistance in silicon with manganese-atom complexes [Mn

Abstract

It is experimentally shown that an anomalously high negative magnetoresistance is observed in silicon with manganese-atom complexes [Mn]4 at room temperature. It is established that the negative magnetoresistance has the largest value at T = 230–240 K, while its value decreases with temperature, and the inversion of the magnetoresistance sign takes place at T < 170 K; i.e., the positive magnetoresistance is observed. It is established that the negative magnetoresistance and its temperature dependence are substantially affected by the intensity of both integrated and monochromatic light.