Abstract
Abstract Both magnetic and electric field dependences of transport coefficients are investigated on vanadium doped TiSe2, Ti1-xVxSe2 (x = 0.01). In contrast to semimetallic TiSe2, the doped sample shows rapid rise in resistivity in the low temperature region. At liquid helium temperatures anomalous behaviors are observed in both resistivity and Hall coefficient. The resistivity is strongly dependent on electric and magnetic fields. Similar nonlinear conduction is observed as that observed in 1T-TaS2. In the low field (Ohmic) region magnetoresistance is negative and anomalously large, Δθ/θ0 = -80% at 1.6 K and 60 kOe. Moreover the Hall coefficient is also found to depend on both magnetic and electric fields. All the experimental data suggest that mobile carriers are excited by the applied fields.
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