Abstract
We have measured the magnetoresistance of n-channel Si:SiGe quantum wells in the temperature range 0.4–6.6 K. For magnetic fields less than 1 T and before the onset of Shubnikov-de Haas oscillations, there is a broad negative magnetoresistance. The change in resistance follows a B 2 dependence and can be explained in terms of the 2D electron-electron interaction.
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