Abstract
Abstract We firstly demonstrated the detection of anions in air using a nano field-effect transistor (nanoFET) device. Negative ions in air charged the top surface of the silicon nanoFET channel affecting the fieldeffect and making a conductance change of the channel proportional to anion concentration around the nano channel sensing surface. The real-time detection of anions in air with the nanoFET was performed for various anion concentrations which were differentiated by the distance of the anion generator to the nanoFET sensor. The air anions detection characteristics of the nanoFET device were evaluated with sensitivity and conductance change rates analysis.
Highlights
Negative ions in air are of great interest for the benefits for air purification and the positive effect on air conditions for healthy living [1-4]
In this paper, we have characterized the response of the developed nano field-effect-transistor (nanoFET) sensor to the concentration of negative ions in air
We demonstrated the quantitative detection of negative ions in air during real-time measurement
Summary
Negative ions in air are of great interest for the benefits for air purification and the positive effect on air conditions for healthy living [1-4]. A nanoFET has a 20 nm-thick silicon channel and a 5 nm-thick gate oxide layer of SiO2 for adsorption of negative ions. The result represented that the nanoFET could detect the negative ions in air.
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