Abstract
Al etching was studied employing negative ions generated in downstream Cl2 plasma. The Al etch rate by the alternate irradiation of positive and negative ions was two times higher than that by usual positive ions. In order to etch the Al film practically on an insulator covered electrode coupled with RF power, reduction of the negative self bias voltage (Vdc) was examined using a magnetic filter which traps electrons. The reason for the high etching reactivity is that the dominant negative ions F in SF6 and Cl− in Cl2 plasmas are atomically very similar to the radicals. Addition of SF6 and H2 to a Cl2/BCl3 mixture reduced Vdc significantly. However, fluorine and hydrogen atoms inhibited Al etching in spite of sufficient ion energy.
Published Version
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