Abstract
Negative photoconductivity in n-GaAs has been observed in the far infrared spectral range between 20 and 29 cm−1. Negative photoconductivity occurs when a magnetic field is applied to the samples and impact ionization of shallow donors by the electric bias field is the dominant mechanism of electron excitation to the conduction band. A conceivable model qualitatively explaining the experimental results is proposed, which involves optical transitions from the lowest Landau subband to higher bound states of shallow donors.
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