Abstract
The electron affinity of diamond and AlGaN surfaces are studied by UV photoemission spectroscopy. It is shown that H terminated diamond surfaces exhibit a negative electron affinity while oxide terminated surfaces exhibit a positive electron affinity. In addition, thin metal layers can also induce a NEA on both (100) and (111) surfaces of diamond. Photoemission results of AlGaN alloy films grown on 6HSiC indicate a negative electron affinity for as-prepared and air exposed surfaces with high Al concentrations.
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