Abstract
A new mechanism is proposed to obtain negative differential resistance in layered heterostructures for conduction parallel to the interface. The mechanism is based on hot-electron thermionic emission from high-mobility GaAs into low-mobility AlxGa1−xAs. Preliminary calculations indicate that high peak-to-valley ratios can be achieved. The transfer speed is estimated to be of the order of 10−11 s. We further show that the concept of hot-electron thermionic emission can be applicable to a variety of devices.
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