Negative differential resistance in trench-type narrow InGaAs quantum wire

Kee-Youn Jang Kee-Youn Jang,T Sugaya,M Ogura,K Matsumo,T Shimizu,Y Sugiyama

doi:10.1109/iciprm.2001.929195

Negative differential resistance in trench-type narrow InGaAs quantum wire

Kee-Youn Jang Kee-Youn Jang, T Sugaya + Show 4 more

https://doi.org/10.1109/iciprm.2001.929195

Copy DOI

Publication Date: May 14, 2001

Affiliation: Japan Science and Technology Agency, National Institute of Advanced Industrial Science and Technology, Center for Research in Economics and Statistics, Centre for Research in Engineering Surface Technology, Center for Responsible Travel, Shibaura Institute of Technology

#Negative Differential Resistance #Quantum-wire Field-effect Transistor + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

A trench-type narrow InGaAs quantum-wire field-effect transistor (QWRFET) on a V-grooved (311)A InP substrate has been successfully fabricated. The trench-type InGaAs QWR-FET with 50 nm gate-length has demonstrated clear negative differential resistance (NDR) characteristics based on real space transfer (RST) with a high peak-to-valley current ratio (PVR=6.2) and a low onset voltage (V/sub NDR/) of 0.1 V. Such a low V/sub NDR/ has not been reported before.

Full Text