Abstract
Abstract Nanoscale 2 dimensional (2D) heterostructures based on zigzag graphene nanoribbons (ZGNRs) anti-symmetrically decorated with boron nitride (BN), are proposed as resonant tunneling diodes (RTD). Boron nitride has been utilized to decorate two edges of zigzag graphene nanoribbons in order to create required bandgap difference for constructing double barrier quantum well heterostructure. Nonequilibrium Green's function (NEGF) method including tight-binding (TB) Hamiltonian is employed to obtain transmission versus energy (T-E) curves and current versus bias voltage (I-V) characteristics of proposed heterostructures. Effect of structural parameters on the I-V characteristic is investigated. Proposed RTDs clearly show negative differential resistance (NDR) behavior in their I-V characteristic. Moreover, it is shown that the NDR behavior of proposed heterostructures can be precisely tuned by modulating structural dimensions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
